| PART |
Description |
Maker |
| NNCD6.8J NNCD16J NNCD18J NNCD8.2J NNCD5.6J NNCD10J |
ESD NOISE CLIPPING DIODE 防静电噪音裁剪二极管
ESD noise clipping diode 2pin XSOF (flat type)
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NNCD8.2B NNCD9.1B NNCD10B NNCD11B NNCD12B NNCD3.3B |
静电放电噪声裁剪二极00毫瓦
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 MW TYPE
|
NEC[NEC]
NEC Corp.
|
| HSMS-2700 |
High Power Clipping/clamping Diode
|
AGILENT TECHNOLOGIES
|
| CPDU24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR5V0C-HF |
Halogen Free ESD Diodes, V-C=14.5V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| TA1310ANG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TA1201CNG |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 I2C总线控制NTSC制式1CHIP彩色电视IC
|
Toshiba, Corp.
|
| SSM6N25TU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 1.6 to 2.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6P16FE |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6P15FU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
| TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BM |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
